| PART |
Description |
Maker |
| 2SK1657 |
Directly driven by Ics having a 3V power supply Has low gate leakage current IGSS= 5nA MAX
|
TY Semiconductor Co., L...
|
| UPA1952TE |
switching device, which can be driven directly by a 1.8 V
|
TY Semiconductor Co., Ltd
|
| M62238FP |
ASSP>ICs for Special Power Supply>Battery Charge Control ICs
|
Renesas
|
| M62253AGP |
ASSP>ICs for Special Power Supply>Battery Charge Control ICs
|
Renesas
|
| AON7232 |
Logic Level Driven
|
Alpha & Omega Semicondu...
|
| 3CW1750A7 |
Cathode Driven RF Amplifier
|
Communications & Power Industries, Inc.
|
| 3CX15-000A7 |
Grid driven RF amplifier
|
Communications & Power Industries, Inc.
|
| 4CX12-000A |
RF amplifier, grid-driven
|
Communications & Power Industries, Inc.
|
| RK16816MGA04 RK16812MG099 RK16814MG02R RK27112MC03 |
Rotary Motor-driven Type
|
ALPS ELECTRIC CO.,LTD.
|
| 3CX5000A7 |
Cathode driven RF linear amplifier
|
Communications & Power Industries, Inc.
|
| 3CX3000A1 |
Grid driven AF amplifier or modulator
|
Communications & Power Industries, Inc.
|
